schottky barrier diode rb085b-30 ? applications ? dimensions (unit : mm) ? land size figure (unit : mm) general rectification ? features 1)power mold type.(cpd) 2)low v f 3)high reliability ? construction ? structure silicon epitaxial planar ? taping specifications( unit : mm) ? absolute maximum ratings (ta=25 ? c) symbol unit v rm v v r v io a i fsm a tj ? c tstg ? c (*1)business frequencies, rating of r-load, 1/2 io per diode, tc=105 c ? electrical characteristics (ta=25 ? c) symbol min. typ. max. unit forward voltage v f - - 0.48 v i f =4.0a reverse current i r - - 300 ? a v r =30v thermal impedance ? jc -- 6.0 ? c/w junction to case conditions parameter limits reverse voltage (repetitive peak) 35 ? 40 to ? 150 parameter reverse voltage (dc) 30 average rectified forward current(*1) storage temperature 10 forward current surge peak (60hz / 1cyc)(*1) 35 junction temperature 150 yyy ? yyy ? yyy ? cpd 1.6 2.3 1.6 2.3 3.0 2.0 6.0 6.0 (1) (2) (3) 1/3 2011.04 - rev.e data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
rb085b-30 ?electrical characteristics curves 0 5 10 15 20 25 30 ave:19.3ns ta=25 i f =0.5a i r =1a irr=0.25*i r n=10pcs 10 100 1000 110100 t ifsm 0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000 rth(j-a) rth(j-c) 1ms im=100ma i f =5a 300us time mounted on a epoxy board 10 100 1000 1 10 100 8.3ms ifsm 1cyc 8.3ms 0 1 2 3 4 5 0 5 10 15 dc d=1/2 sin( ? =180) 10 100 1000 10000 0 5 10 15 20 25 30 f=1mhz 410 420 430 440 450 460 0 20 40 60 80 100 120 140 160 180 200 1500 1550 1600 1650 1700 1750 1800 1850 1900 1950 2000 ave:1617.3pf ta=25 ? c f=1mhz v r =0v n=10pcs 0.01 0.1 1 10 100 1000 10000 100000 1000000 0 5 10 15 20 25 30 ta=150 ? c ta=125 ? c ta=75 ? c ta=-25 ? c ta=25 ? c 0.01 0.1 1 10 0 100 200 300 400 500 600 700 ta=150 ? c ta=-25 ? c ta=25 ? c ta=75 ? c ta=125 ? c 0 50 100 150 200 250 300 ave:63.0a 8.3ms ifsm 1cyc forward voltage : v f (mv) v f -i f characteristics forward current : i f (a) reverse current:i r (ua) reverse voltage : v r (v) v r -i r characteristics capacitance between terminals:ct(pf) reverse voltage : v r (v) v r -ct characteristics v f dispersion map forward voltage:v f (mv) reverse current:i r (ua) i r dispersion map capacitance between terminals:ct(pf) ct dispersion map i fsm dispersion map peak surge forward current:i fsm( a) peak surge forward current:i fsm (a) number of cycles i fsm -cycle characteristics peak surge forward current:i fsm (a) time : t(ms) i fsm -t characteristics time : t(s) rth-t characteristics transient thaermal impedance:rth ( ? c/w) forward power dissipation:pf(w) average rectified forward current : io(a) io-pf characteristics trr dispersion map reverse recovery time:trr(ns) ta=25 ? c v r =30v n=30pcs ave:41.0ua ave:429.3mv ta=25 ? c i f =4a n=30pcs 2/3 2011.04 - rev.e www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
rb085b-30 0 2 4 6 8 10 01 02 03 0 dc d=1/2 sin( ? =180) reverse power dissipation:p r (w) reverse voltage : v r (v) v r -p r characteristics ambient temperature:ta( ? c) derating curve"(io-ta) average rectified forward current:io(a) average rectified forward current:io(a) case temparature:tc( ? c) derating curve"(io-tc) 0 5 10 15 20 0 25 50 75 100 125 150 d=1/2 sin( ? =180) dc 0 5 10 15 20 0 25 50 75 100 125 150 dc d=1/2 sin( ? =180) t tj=150 ? c d=t/t t v r io v r =15 v 0a 0v t tj=150 ? c d=t/t t v r io v r =15v 0a 0v 0 5 10 15 20 25 30 no break at 30kv c=100pf r=1.5k ? c=200pf r=0 ? no break at 30kv electrostatic discharge test esd(kv) esd dispersion map 3/3 2011.04 - rev.e www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
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